This experimental apparatus features a micro-current source to supply forward current for a PN junction, allowing for precise measurement of the forward voltage drop without the instability of direct measurements. It includes a temperature control device to obtain current-voltage (I-V) characteristic curves at varying temperatures, facilitating the study of the relationships between voltage, current, and temperature. This enables the determination of the Boltzmann constant, sensitivity, and bandgap energy of silicon. Compatible with the PASCO digital science platform, it ensures efficient and accurate experimentation.
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