The Giant Magnetoresistance (GMR) effect refers to a significant change in the electrical resistivity of magnetic materials under an external magnetic field. This quantum mechanical phenomenon occurs in layered thin-film structures composed of alternating ferromagnetic and non-ferromagnetic layers. When the magnetic moments of the ferromagnetic layers are aligned parallel, spin-dependent scattering of charge carriers is minimized, resulting in the lowest resistance. Conversely, when the magnetic moments are anti-parallel, spin-dependent scattering is maximized, leading to the highest resistance.
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